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TIP102 TIP105 TIP107
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s
s s
STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. Also TIP105 is a PNP type.
1 2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 K
R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO VEBO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ase 25 o C T amb 25 oC Storage Temperature Max. Operating Junction Temperature TIP105 60 60 5 8 15 1 80 2 -65 to 150 150 Value TIP102 TIP107 100 100 V V V A A A W W
o o
Un it
C C
* For PNP types voltage and current values are negative.
October 1999
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TIP102 / TIP105 / TIP107
THERMAL DATA
R thj -case R thj -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.56 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l I CEO I CBO IEBO Parameter Collector Cut-off Current (IB = 0) Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Con ditions for TIP105 for T IP102/TIP107 for TIP105 for T IP102/TIP107 V EB = 5 V I C = 30 mA for TIP105 for T IP102/TIP107 IC = 3 A IC = 8 A IC = 8 A IC = 3 A IC = 8 A I F = - I C = 10 A I B = 6 mA I B = 80 mA V CE = 4 V V CE = 4 V V CE = 4 V 1000 200 V CE = 30 V V CE = 50 V V CB = 60 V V CB = 100 V Min. Typ. Max. 50 50 50 50 8 Unit A A A A mA
V CEO(sus ) * Collector-Emitt er Sustaining Voltage (I B = 0) VCE(sat )* V BE * h F E* VF * Collector-Emitt er Saturation Voltage Base-Emitter Voltage DC Current G ain Forward Voltage of Commutation Diode (I B = 0)
60 100 2 2.5 2.8 20000 2.8
V V V V V
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative.
Safe Operating Area
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TIP102 / TIP105 / TIP107
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
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TIP102 / TIP105 / TIP107
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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